文献类型：期刊文献

英文题名：A revisit from CVD kinetics to CVD reactor: Investigating uniform growth mechanism of polysilicon in a reduction furnace

作者：Si, Wei[1];Wang, Ning[2];Zong, Yuan[1];Dai, Gance[1];Meng, Fanzheng[1];Yang, Zuodong[1];Zhao, Ling[1];Xin, Zhong[1];Jiang, Guangjing[2]

机构：[1]East China Univ Sci & Technol, Sch Chem Engn, 130 Meilong Rd, Shanghai 200237, Peoples R China;[2]Solareast Arcon Sunmark Co Ltd, Beijing, Peoples R China

年份：2024

卷号：295

外文期刊名：CHEMICAL ENGINEERING SCIENCE

收录：;EI(收录号：20241715963223);WOS:【SCI-EXPANDED(收录号:WOS:001233133600001)】；

语种：英文

外文关键词：Polysilicon; Reduction furnace; Uniform growth; CVD reaction; CVD reactor

摘要：The uniform growth of polysilicon rods is essential for CVD process in the reduction furnace. Considering the complex interaction of CVD reaction and transport phenomena, the reaction engineering analysis of CVD reaction has been investigated and the requirements for the design and operation of CVD reactor are proposed concerning temperature and species concentrations. Based on the numerical simulation of CVD process in a reduction furnace with 12 pairs of rods, the non-uniform deposition is mainly attributed to the mismatching between the TCS transportation and consumption. Moreover, two measures have been attempted. One is to enhance axial mixing by increasing inlet velocity and the other is to reduce TCS consumption by reducing inlet TCS mole fraction and heat flux at the rod surface. Both measures have been confirmed beneficial for the uniform growth of the polysilicon rods.