文献类型：期刊文献

英文题名：Effects of emissive layer architecture on recombination zone and F?rster resonance energy transfer in organic light-emitting diodes

作者：Lü, Zhaoyue[1]; Hou, Ying[1]; Xiao, Jing[2]; Xu, Haisheng[1,3]

机构：[1] Department of Physics, School of Science, East China University of Science and Technology, Shanghai, 200237, China; [2] Physics and Electronic Engineering College, Taishan University, Shandong Province, 271021, China; [3] Kunshan Hisense Electronics, Co. Ltd., Kunshan, Jiangsu, 215300, China

年份：2014

卷号：35

期号：5

起止页码：247

外文期刊名：Displays

收录：EI(收录号：20144500159603)

语种：英文

外文关键词：Tin oxides - Resonance - Energy transfer - Indium compounds - Organic light emitting diodes (OLED)

摘要：Recombination zone and F?rster resonance energy transfer (FRET) in multilayer organic light-emitting diodes (OLEDs) were investigated. Basis device architecture is indium tin oxide (ITO)/N, N′-diphenyl-N, N′-bis(1-naphthyl-phenyl)-1, 1′-biphenyl-4, 4′-diamine (NPB)/4-(dicyanomethylene)-2-tert-butyl-6-(1, 1, 7, 7- tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB)/NPB (spacer)/tris-(8-hydroxyl quinoline) aluminum (Alq3)/2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (BCP)/Al. Exciton recombination zone is located at DCJTB and Alq3 layers. When the NPB spacer is 10-nm-thick, Alq3 emission governs in electroluminescent (EL) spectra owing to absence of FRET between DCJTB and Alq3. FRET occurs while the NPB spacer is 5-nm-thick and thus DCJTB emission is dominant in EL spectra. As the emissive layout of DCJTB/Alq3/NPB substitutes for DCJTB/NPB/Alq3, both DCJTB and NPB emissions are observed due to electron-blocking effect of NPB. ? 2014 Elsevier B.V. All rights reserved.