文献类型：期刊文献

中文题名：无机缓冲层对柔性AZO薄膜光电及耐弯曲性能的影响

英文题名：Effect of Inorganic Buffer Layers on the Photoelectric Properties and Bending Resistance Performance of Flexible AZO Films

作者：陈成[1];陆慧[1]

机构：[1]华东理工大学物理系,上海200237

年份：2020

卷号：46

期号：4

起止页码：573

中文期刊名：华东理工大学学报（自然科学版）

外文期刊名：Journal of East China University of Science and Technology

收录：CSTPCD;;Scopus;北大核心:【北大核心2017】；CSCD:【CSCD_E2019_2020】；

语种：中文

中文关键词：柔性AZO薄膜;磁控溅射;无机缓冲层;光电性质;耐弯曲特性

外文关键词：flexible AZO films;magnetron sputtering;inorganic buffer layers;photoelectric properties;bending resistance performance

摘要：采用中频反应磁控溅射法,在柔性聚对苯二甲酸乙二酯(PET)衬底上分别以TiO2、SnO2和ZnO为缓冲层,室温沉积了铝掺杂氧化锌(AZO)薄膜,研究了不同缓冲层对柔性AZO薄膜光电性质和耐弯曲特性的影响。研究结果表明,3种缓冲层均可以有效改善柔性AZO薄膜的电学性质,其中在SnO2缓冲层上,氩气和氧气流量比为5∶1条件下生长的AZO薄膜光电性能提高最为显著,薄膜电阻率明显降低,可见光区域平均透过率超过85%。SnO2和ZnO缓冲层对于100~1000次内弯曲时的AZO薄膜电学性质的蜕化具有非常显著的限制作用,而TiO2和SnO2缓冲层则对100~1000次外弯曲时的薄膜的耐弯曲性能的改善效果最佳。
Aluminum doped Zinc Oxide(AZO)thin films with TiO2,SnO2 and ZnO buffer layers were deposited on the flexible PET substrates by intermediate frequency reaction magnetron sputtering method at room temperature.The effects of different buffer layers on the photoelectric properties and bending resistance performance of flexible AZO films were investigated.The results showed that three kinds of buffer layers improved the electrical properties of the flexible AZO thin films.The AZO thin film with SnO2 buffer layer deposited Ar/O2 ratio of 5∶1 showed the best performance,of which the reducing rate in the resistivity reached 90%and the average optical transmittance was over 85%in the visible range.The changes in the electrical resistance of the flexible AZO thin films under cyclic bending condition were studied as well.The AZO thin film with SnO2 or ZnO buffer layer exhibited an excellent electrical stability after inward repeated bending cycles,at steps of 100,to a maximum number of 1000,with radius fixed at 1.2 cm.The relative resistivity increment was always below 10%,whereas the dramatic increase of the electrical resistance is more than a factor of 250 after 800 cycles of bending for the as-grown ones.The TiO2 and SnO2 buffer layers were found to be better when the AZO films are outward bent at the same cycles,and their relative resistivity increments were maintained at about 6%and 12%,respectively.