文献类型：期刊文献

英文题名：The synthesis of black phosphorus: From zero: From three-dimensional nanostructures

作者：Dinh, Khang Ngoc[1,2]; Zhang, Yu[1]; Sun, Wenping[3]

机构：[1] School of Mechanical and Power Engineering, East China University of Science and Technology, 130 Meilong Road, Shanghai, 200237, China; [2] Energy Research Institute @ NTU [ERI@N], Nanyang Technological University, Singapore, 637553, Singapore; [3] School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, China

年份：2021

卷号：3

期号：3

外文期刊名：JPhys Energy

收录：EI(收录号：20212210431233)

语种：英文

外文关键词：Field effect transistors - Semiconductor quantum dots - Phosphorus - Thermoelectric equipment - Physicochemical properties

摘要：The discovery of monolayered black phosphorus (phosphorene) in 2014 gives rise to enormous research enthusiasm for its unique electrical and physicochemical properties. Since then, the applications of black phosphorus and its nanostructures have been extended to various fields covering field effect transistors, rechargeable batteries, electrocatalysis, sensors, thermoelectric materials, and so forth. However, controllable and scalable synthesis of BP and its nanostructures remains a challenge. In this review, we provide a state-of-the-art overview of the progress towards the synthesis of bulk BP and its typical nanostructured counterparts, including the 0D BP (quantum dots), 1D BP (nano/micro-belts), 2D BP (phosphorene), and 3D BP (sponges). Special focus will be made on the various synthetic methods, the characterizations of products, and the corresponding necessary improvements. We close the review with a look at the challenges and perspectives regarding future studies. ? 2021 The Author(s). Published by IOP Publishing Ltd.