文献类型：期刊文献

中文题名：低温烧结Al_(2)O_(3)陶瓷微波介电性能

英文题名：Microwave Dielectric Properties of Low Temperature Sintered Al_(2)O_(3) Ceramics

作者：董光宇[1];李蔚[1];袁翠[2]

机构：[1]华东理工大学材料科学与工程学院,上海200237;[2]上海三思电子工程有限公司,上海200050

年份：2022

卷号：48

期号：3

起止页码：337

中文期刊名：华东理工大学学报（自然科学版）

外文期刊名：Journal of East China University of Science and Technology

收录：Scopus;北大核心:【北大核心2020】；CSCD:【CSCD_E2021_2022】；

语种：中文

中文关键词：Al_(2)O_(3);低温烧结;显微结构;Q×f值;微波介电性能

外文关键词：Al_(2)O_(3);low temperature sintering;microstructure;Q×f value;microwave dielectric property

摘要：考察了复合添加剂0.4%CuO-0.5%TiO_(2)-0.1%Nb_(2)O_(5)(均为质量分数,下同)掺杂Al_(2)O_(3)陶瓷材料的显微结构和微波介电性能。结果表明,添加量为1%(质量分数)的0.4%CuO-0.5%TiO_(2)-0.1%Nb_(2)O_(5)复合添加剂可以有效地降低Al_(2)O_(3)陶瓷的烧结温度;1150℃时烧结的样品显微结构均匀且相对密度可以达到96%;随着烧结温度升高材料密度也随之增大,但是出现了晶粒异常长大以及杂相物质聚集现象;这种低温烧结的Al_(2)O_(3)陶瓷材料具有较高的Q×f值(Q为品质因数,f为谐振频率),在1150℃下烧结样品的最大Q×f值为64632 GHz,讨论了低温下Al_(2)O_(3)陶瓷材料致密化的原因,及其异常的晶粒长大行为和微波介电性能的变化趋势。
With the rapid development of information and communication technology,microwave dielectric materials have also developed correspondingly.Al_(2)O_(3) ceramics are widely used in resonators,ceramic substrates,and satellite communication devices due to their excellent microwave dielectric properties.However,the sintering temperature of Al_(2)O_(3) ceramics is relatively high.Considering environmental protection,energy saving and emission reduction,low-temperature sintering of Al_(2)O_(3) ceramics is also an important aspect which people pay attention to.Doping additives is a method that has been studied more and has a significant effect on reducing the sintering temperature of Al_(2)O_(3) ceramics.Recently,CuO-TiO_(2)-Nb_(2)O_(5) doping has attracted the attention of people because of its outstanding cooling effect.Although some reports show that it can effectively reduce the sintering temperature,and the Q×f value is low.The sintering behavior,microstructure and microwave dielectric properties of Al_(2)O_(3) ceramics doped with 0.4%CuO-0.5%TiO_(2)-0.1%Nb_(2)O_(5) are investigated.The results show that 0.4%CuO-0.5%TiO_(2)-0.1%Nb_(2)O_(5)(mass fraction 1%)reduces the sintering temperature of Al_(2)O_(3) ceramics effectively.Samples with relative densities higher than 96%and uniform microstructure can be obtained when sintered at 1150℃.Higher temperature can further increase the density of the samples,but it inevitably leads to abnormal grain growth.Meanwhile,the investigation results show that the low-firing Al_(2)O_(3) ceramics have good microwave dielectric properties and especially high Q×f value.A high Q×f value of 64632 GHz could be obtained for the 1150℃sintered sample.The reason for the low temperature densification,abnormal grain growth behavior and the changing trend of the microwave dielectric properties are discussed in the paper.