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侧链含有不同电子受体的聚咔唑衍生物的合成及其WORM型存储性能    

Synthesis and WORM Memory Performance of Polycarbazole Derivatives with Different Electron Acceptors in the Side Chain

文献类型:期刊文献

中文题名:侧链含有不同电子受体的聚咔唑衍生物的合成及其WORM型存储性能

英文题名:Synthesis and WORM Memory Performance of Polycarbazole Derivatives with Different Electron Acceptors in the Side Chain

作者:刘柳[1];程庆[1];樊菲[1];张斌[1];陈彧[1]

机构:[1]华东理工大学化学与分子工程学院,教育部结构可控先进功能材料及其制备重点实验室,上海200237

年份:2016

卷号:29

期号:2

起止页码:163

中文期刊名:功能高分子学报

外文期刊名:Journal of Functional Polymers

收录:CSTPCD;;北大核心:【北大核心2014】;CSCD:【CSCD2015_2016】;

基金:国家自然科学基金重点基金(51333002,21404037);教育部博士点基金(20120074110004);中央高校基金(WJ1514311)

语种:中文

中文关键词:聚咔唑;D-A型共轭聚合物;WORM型存储器件;阈值电压;电流开关比

外文关键词:polycarbazole;D-A conjugated polymers;WORM memory devices;threshold voltage;ON/OFF current ratio;

摘要:利用Suzuki偶联反应合成了3种侧链含有不同电子受体的可溶性D-A型聚咔唑衍生物:聚[(9-(2-己基葵基)-9 H-咔唑)-(9-(4-硝基苯基)-9 H-咔唑)](PCz-NO_(2))、聚[(9-(2-己基葵基)-9 H-咔唑)-(4-(9 H-咔唑-9-基)苯甲醛)](PCz-CHO)和聚[(9-(2-己基葵基)-9 H-咔唑)-(4-(9 H-咔唑-9-基)苯甲腈)](PCz-CN)。基于这3种聚合物的存储器件(器件结构:Al(200nm)/高分子(90nm)/氧化铟锡(ITO)均表现出典型的电双稳电子开关效应和非易失性一次写入多次读出(WORM)型存储性能。随着共轭聚合物光学带隙的增加[2.26eV(PCz-NO_(2))→2.79eV(PCzCHO)→3.20eV(PCz-CN)],相应器件的启动阈值电压逐渐增大(-1.70V→-1.81V→-1.89V);而电流开关比(ON/OFF)则依次减小(6.63×10^(4)→4.08×10^(4)→5.68×10^(3))。含氰基的聚咔唑衍生物需要的开启电压最大,展现出来的电流开关比在3种聚合物中则最小。
Three soluble D-A type polycarbazole derivatives with different electron acceptors in the side chain,including poly[(9-(2-hexyldecyl)-9 H-carbazole)-(9-(4-nitrophenyl)-9 H-carbazole)](PCz-NO_(2)),poly[(9-(2-hexyldecyl)-9 H-carbazole)-(4-(9 H-carbazole-9-yl)benzaldehyde)](PCz-CHO),and poly[(9-(2-hexyldecyl)-9 H-carbazole)-(4-(9 H-carbazole-9-yl)benzonitrile)](PCz-CN),were synthesized through the Suzuki coupling reaction.These polymers-based electronic devices with a configuration of Al(200nm)/polymer(90nm)/Indium-Tin Oxide(ITO)had representative bistable electrical switching behavior and non-volatile write-once read-many-times(WORM)memory performance.When the optical bandgap of conjugated polymer was increased(2.26eV(PCz-NO_(2))→2.79eV(PCz-CHO)→3.20eV(PCz-CN)),the threshold voltage of the corresponding electronic device gradually increased(-1.70 V→-1.81 V→-1.89V),whereas the ON/OFF current ratio was changed from 6.63×10^(4)for PCz-NO_(2)to 4.08×10^(4)for PCz-CHO and to 5.68×10^(3)for PCz-CN.Among these three derivatives,PCz-CN exhibited the biggest turn-on voltage and the lowest ON/OFF current ratio.

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