文献类型：期刊文献

中文题名：利用Cs_2CO_3和Cs_2CO_3:BPhen改善OLED的光电性能

英文题名：Improved properties of OLED by utilizing Cs_2CO_3 and Cs_2CO_3:BPhen

作者：杨魏强[1];张彤蕾[1];陆勍[1];陈炳月[1];吕昭月[1]

机构：[1]华东理工大学理学院物理系,上海200237

年份：2015

卷号：26

期号：4

起止页码：671

中文期刊名：光电子．激光

外文期刊名：Journal of Optoelectronics·Laser

收录：EI(收录号：20152200887523);Scopus;北大核心:【北大核心2014】；CSCD:【CSCD2015_2016】；

基金：中央高校基本科研业务费专项资金(222201314022);上海市大学生创新训练项目(S13047)资助项目

语种：中文

中文关键词：有机电致发光器件(OLED);电子注入层(EIL);碳酸铯(Cs2CO3);掺杂

外文关键词：organic light-emitting diode （OLED）; electron injection layer （EIL）; cesium carbonate（Cs2 CO3 ） ; doping

摘要：碳酸铯(Cs2CO3)是优秀的电子注入材料,本文通过器件ITO/MoO3(3nm)/NPB(40nm)/C545T:Alq3(99∶1,30nm)/Alq3(30nm)/Cs2CO3(xnm)/Al(100nm)优化了Cs2CO3作为电子注入层(EIL)的厚度。Cs2CO3作为EIL,提高了器件的电子注入能力,使更多的电子得以与空穴在发光层复合发光。实验结果表明,Cs2CO3作为EIL的优化厚度为1.5nm时,对应器件的效率是不含Cs2CO3的3倍以上。在Cs2CO3作为EIL的基础上,研究器件结构为ITO/NPB(40nm)/Alq3(45nm)/Cs2CO3:Bphen(0%,5%,10%,15nm)/Cs2CO3(1.5nm)/Al(100nm)时不同浓度的Cs2CO3掺杂电子传输层Bphen(Cs2CO3:Bphen)对器件性能的影响。结果表明,Cs2CO3掺杂浓度较低时(5%)能进一步改善器件的电子传输和注入能力,进而提高器件的发光效率;而掺杂浓度较高时(10%),由于Cs扩散严重,形成淬灭中心,使得发光效率衰减严重。
Cesium carbonate （Cs2 CO3 ） is known as an excellent electronic injection material. To optimize its thickness,the devices of ITO/MoO3 （3 nm）/NPB（40 nm）/C545T：Alq3/（99 ： 1,30 nm）/Alq3 （30 nm）/Cs2CO3 （x nm）/Al（100 nm） were prepared in this work. The enhancement of electron injection was observed owing to the introduction of Cs2 CO3 EIL. Thus, more electrons recombine with holes in the emissive layer. The experimental results show that the optimal thickness of Cs2 CO3 as electron in- jection layer （EIL） is 1. 5 nm. The efficiency of the 1.5-nm-Cs2CO3-based-device is more than three times of that of the device without Cs2 CO3. On the basis of it, the effect of Cs2 COa doped Bphen （Cs2 CO3 .Bphen） on the device performance is also investigated by varying Csz CO3 concentration. The device structures are ITO/NPB（40 nm）/Alqa （45 nm）/ Cs2CO3 ： Bphen（0%, 5%, 10%, 15 rim）/ Cs2 COa （1.5 nm）/Al（100 nm）. Considering the current density-voltage （J-V） characteristics of the e- lectron-only devices of ITO/BCP （15 nm）/Alqa （45 nm）/Cs2CO3 ： Bphen （0%, 5%, 10%, 15 nm）/ Cs2 COa （1.5 nm）/A1, the following results can be concluded. When the doping concentration is lower （5 %）, the electronic injection and transport capacity of the device will be further enhanced, resulting in the higher luminous efficiency. When the doping concentration is high （10 %）, the high efficiency roll-off is observed owning to Cs atom quenching center induced by interdiffusion.