文献类型：期刊文献

中文题名：低温沉积ZnO薄膜的压敏特性及其热处理影响

英文题名：Effects of Heat Treatment on the Varistor Performance of ZnO Thin Films Deposited at Low Temperatures

作者：夏姣贞[1];陆慧[1];王璞[1];徐晓峰[1];杜明贵[1]

机构：[1]华东理工大学物理系,上海200237

年份：2006

卷号：27

期号：10

起止页码：1763

中文期刊名：Journal of Semiconductors

外文期刊名：半导体学报（英文版）

收录：CSTPCD;;EI(收录号：20064910289675);Scopus;北大核心:【北大核心2004】；CSCD:【CSCD2011_2012】；

语种：中文

中文关键词：ZnO薄膜;低温;膜层;热处理;压敏电压;非线性系数

外文关键词：ZnO thin film; low temperature; layer; heat treatment; varistor voltage; nonlinearity coefficient

摘要：采用GDARE法在较低温度下，通过一次和多次沉积制备单层及多层ZnO薄膜．AFM和XRD分析表明，薄膜具有以ZnO（002）晶面取向为主的多晶结构，多层膜的晶粒尺寸增大．经200～300℃退火热处理，薄膜呈现出良好的低压压敏特性．经200℃退火热处理后，多层ZnO薄膜的非线性系数达到61．54，压敏电压20.10V.在一定范围内升高热处理温度，可明显降低压敏电压．分析了不同膜层及热处理温度对ZnO薄膜压敏特性的影响机理.
Single-layer and multilayer ZnO thin films are deposited by means of gas discharge active reaction evaporation through single and multiple depositions at relatively lower temperatures. AFM and XRD patterns show that these films possess multicrystal fabric that gives priority to （002） ,and the grain dimension of the multilayer ZnO film is increased. A multilayer ZnO film with a nonlinear coefficient of 61.54 and varistor voltage of 20.10V can be obtained at a 200℃ annealing temperature. The varistor voltage can be reduced significantly by increasing the annealing temperature within a certain range. The mechanism behind the effect of different layers and annealing temperature on varistor characteristics of ZnO thin films is also discussed.