文献类型：期刊文献

英文题名：Electromagnetically induced grating in asymmetric quantum wells via Fano interference

作者：Zhou, Fengxue[1];Qi, Yihong[1];Sun, Hui[2];Chen, Dijun[3];Yang, Jie[1];Niu, Yueping[1];Gong, Shangqing[1]

机构：[1]E China Univ Sci & Technol, Dept Phys, Shanghai 200237, Peoples R China;[2]Shaanxi Normal Univ, Sch Phys & Informat Technol, Xian 710062, Peoples R China;[3]Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai Key Lab All Solid State Laser & Appl Tec, Shanghai 201800, Peoples R China

年份：2013

卷号：21

期号：10

起止页码：12249

外文期刊名：OPTICS EXPRESS

收录：;EI(收录号：20132416408365);WOS:【SCI-EXPANDED(收录号:WOS:000319339600061)】；

基金：The research is supported by the National Natural Science Foundation of China (Grant Nos. 11274112, 11074263), the Shanghai Rising-Star Program of Grant No. 11QA1407400, the Fundamental Research Funds for the Central Universities (WM1114024), and National Laboratory for Infrared Physics, CAS(201101). H. S. would like to acknowledge the support from the NSF-China under Grant No. 11104176.

语种：英文

外文关键词：Diffraction - Photonic devices - Diffraction gratings

摘要：We propose a scheme for obtaining an electromagnetically induced grating in an asymmetric semiconductor quantum well (QW) structure via Fano interference. In our structure, owing to Fano interference, the diffraction intensity of the grating, especially the first-order diffraction, can be significantly enhanced. The diffraction efficiency of the grating can be controlled efficiently by tuning the control field intensity, the interaction length, the coupling strength of tunneling, etc. This investigation may be used to develop novel photonic devices in semiconductor QW systems. (C)2013 Optical Society of America