文献类型：期刊文献

英文题名：Fast Growth of Continuous Single-Crystal Graphene Film on Copper by Low-Pressure Chemical Vapor Deposition

作者：Xie, Haifen[1];Zhang, Jinming[1];Mu, Haichuan[1]

机构：[1]East China Univ Sci & Technol, Sch Sci, Dept Phys, 130 Meilong Rd, Shanghai 200237, Peoples R China

年份：2020

卷号：49

期号：8

起止页码：5064

外文期刊名：JOURNAL OF ELECTRONIC MATERIALS

收录：;EI(收录号：20202508837404);WOS:【SCI-EXPANDED(收录号:WOS:000545700200072)】；

语种：英文

外文关键词：Graphene; CVD; oxygen passivation; short time

摘要：In this study, continuous and single-crystal graphene films on copper (Cu) are synthesized by low-pressure chemical vapor deposition in a growth time of 40 min. Meticulous modulation of the oxygen and carbon supply in multistage synthesis processing and dependence of graphene properties on the oxygen and carbon supply has been investigated. It is found that double-oxygen passivation together with the optimal methane (CH4):hydrogen (H-2) ratio leads to a balance between nucleation and graphene growth rate to accomplish continuous single-crystal bilayer graphene films in a short time. Moreover, the graphene-based field effect transistor reveals the superior hole mobility of 5565 cm(2) V-1 s(-1). Our study provides a simple chemical vapor deposition procedure to achieve high quality graphene film on Cu in a short time.