文献类型：期刊文献

英文题名：Tunable electronic properties and Schottky barrier in a graphene/WSe2 heterostructure under out-of-plane strain and an electric field

作者：Zhang, Rui[1,2];Hao, Guoqiang[1];Ye, Xiaojun[2];Gao, Shangpeng[3];Li, Hongbo[1]

机构：[1]East China Univ Sci & Technol, Shanghai 200237, Peoples R China;[2]Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China;[3]Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China

年份：2020

卷号：22

期号：41

起止页码：23699

外文期刊名：PHYSICAL CHEMISTRY CHEMICAL PHYSICS

收录：;EI(收录号：20204709500713);WOS:【SCI-EXPANDED(收录号:WOS:000582937400021)】；

基金：This work was supported by the East China University of Science and Technology (200237) and the Institute of Electrical Engineering, Chinese Academy of Sciences (100190). This work was financed by Grant-in-aid for Scientific Research from the Ministry of Science and Technology of China (2018YFB1500903).

语种：英文

外文关键词：Graphene - Field effect transistors - Graphene transistors - Tungsten compounds - Van der Waals forces - Schottky barrier diodes - Electric fields - Electronic properties - Strain - Ohmic contacts

摘要：Tuning the electrical transport behavior and reducing the Schottky barrier height of nanoelectronic devices remain a great challenge. To solve this issue, the electronic properties and Schottky barrier of the graphene/WSe2 heterostructure are investigated by the first-principles method under out-of-plane strain and an electric field. Our results show that the WSe2 monolayer and graphene could form a stable van der Waals heterostructure and the intrinsic electronic properties are well preserved. Furthermore, a transformation of a Schottky contact from the n-type to p-type occurs at d = 3.87 angstrom and E = +0.06 V angstrom(-1). In addition, an ohmic contact is formed with E = -0.50, +/- 0.60 V angstrom(-1). Lastly, the effective masses of electrons and holes are calculated to be 0.057m(0) and -0.055m(0) at the equilibrium state, respectively, indicating that the heterostructure has a high carrier mobility. Our research will provide promising approaches for the future design and development of graphene/WSe2 nano-field effect transistors.