文献类型：期刊文献

中文题名：电子传输层结构对有机发光二极管性能的影响

英文题名：Influence of Electron Transport Layer on the Performance of Organic Light-emitting Diodes

作者：吕昭月[1];谢海芬[1]

机构：[1]华东理工大学物理系,上海200237

年份：2021

卷号：40

期号：8

起止页码：37

中文期刊名：实验室研究与探索

外文期刊名：Research and Exploration In Laboratory

收录：CSTPCD;;北大核心:【北大核心2020】；

基金：上海高校市级重点课程《有机光电器件》虚拟仿真实验教学项目(沪教委[2020]58号)。

语种：中文

中文关键词：氟化锂;N型掺杂效应;绝缘效应;电子传输

外文关键词：lithium fluoride;N-type doping effect;insulation effect;electron transport

摘要：通过真空蒸镀制备ITO(氧化铟锡)/NPB(N,N′-二(萘-2-基)-N,N′-二(苯基)联苯-4,4′-二胺)/Alq_(3)(8-羟基喹啉铝)/LiF/Alq_(3)/Al(铝)的多层常规有机发光二极管(Organic Llight-Emitting Diode,OLED)器件,并采用2-(4-叔丁基苯)-5-(4-联苯基)-1,3,4-噁唑(PBD)取代Alq_(3)作电子传输层,研究了不同厚度LiF在电子传输层中影响器件光电性能的物理机理。结果表明,PBD具有高于Alq_(3)的电子迁移率,有助改善器件的电子传输,并发现LiF在电子传输层中具有双重效应:N型掺杂效应和绝缘效应。较薄的LiF表现为N型掺杂效应,提升了电子传输性能,改善OLED性能。厚度超过1.0 nm时,LiF表现为绝缘效应,器件的驱动电压会升高。PBD厚度为15 nm、LiF厚度1.0 nm时,器件的发光亮度和效率最优。
In a conventional organic light-emitting diode(OLED),the injection and transport of electrons are inferior to those of holes,which leads to an imbalance of electrons and holes and poor performance of OLEDs.Hence,it is necessary to improve the electron injection and transport for designing high performance of OLEDs.Multilayer OLEDs with a structure of ITO(indium tin oxide)/NPB(N,N′-Bis(naphthalene-1-yl)-N,N′-bis(phenyl)-benzidine)/Alq_(3)(tris-(8-hydroxyquinoline)aluminum)/LiF(lithium fluoride)/Alq_(3)/Al(aluminum)were produced by thermal evaporation.Then,the effect of PBD(2-(4-biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole)as an electron transport layer(ETL)and differentthicknessofLiF in the ETL on the performance of devices was innovatively studied.The results demonstrate that electron transport ability of devices is improved by higher electron mobility of PBD than that of Alq_(3).Dual effects of LiF in ETL areobserved:N-type doping and insulation effect.N-doping effect is dominant for its thickness less than 1.0 nm,and then the device performance is enhanced due to improved electron tran sportability.Insulation effect of LiF is preponderate for its thickness more than 1.0 nm,resulting in higher driven voltage.When the thicknesses of PBD and LiF are 15 nm and 1.0 nm,respectively,the performance of the device is the optimum and efficiency achieved the highest.