文献类型：期刊文献

英文题名：Wafer-Scale Demonstration of MBC-FET and C-FET Arrays Based on Two-Dimensional Semiconductors

作者：Xia, Yin[1];Zong, Lingyi[1];Pan, Yu[2];Chen, Xinyu[1];Zhou, Lihui[3];Song, Yiwen[2];Tong, Ling[1];Guo, Xiaojiao[1];Ma, Jingyi[1];Gou, Saifei[1];Xu, Zihan[4];Dai, Sheng[3];Zhang, David Wei[1];Zhou, Peng[1];Ye, Yu[2];Bao, Wenzhong[1]

机构：[1]Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China;[2]Peking Univ, Sch Phys, Ctr Nanooptoelect, State Key Lab Mesoscop Phys & Frontiers Sci, Beijing 100871, Peoples R China;[3]East China Univ Sci & Technol, Key Lab Adv Mat & Feringa Nobel Prize Scientist, Inst Fine Chem, Sch Chem & Mol Engn,Joint Res Ctr, Shanghai 200237, Peoples R China;[4]Shenzhen Six Carbon Technol, Shenzhen 518055, Peoples R China

年份：2022

卷号：18

期号：20

外文期刊名：SMALL

收录：;EI(收录号：20221611982063);WOS:【SCI-EXPANDED(收录号:WOS:000783219200001)】；

基金：Y.X., L.Z, and Y.P. contributed equally to this work. This work was supported by the National Key Research and Development Program (Grant No.2021YFA1200500), and in part by the Innovation Program of Shanghai Municipal Education Commission (2021-01-07-00-07E00077), the Key Research Program of Frontier Sciences, CAS (grant ZDBS-LY-JSC015), the Shanghai Municipal Science and Technology Commission (21DZ1100900), the Shanghai Rising-star Program (20QA1402400), the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning, and the young scientist project of MOE innovation platform.

语种：英文

外文关键词：2D semiconductors; complementary field-effect transistors; MoS; (2); MoTe; (2); multi-bridge channel field-effect transistors

摘要：Two-dimentional semiconductors have shown potential applications in multi-bridge channel field-effect transistors (MBC-FETs) and complementary field-effect transistors (C-FETs) due to their atomic thickness, stackability, and excellent electrical properties. However, the exploration of MBC-FET and C-FET based on large-scale 2D semiconductors is still lacking. Here, based on a reliable vertical stacking of wafer-scale 2D semiconductors, large-scale MBC-FETs and C-FETs using n-type MoS2 and p-type MoTe2 are successfully fabricated. The drive current of an MBC-FET with two layers of MoS2 channel (20 mu m/10 mu m) is up to 60 mu A under 1 V bias. Compared with the single-gate MoS2 FET, the carrier mobility of MBC-FET is 2.3 times higher and the sub-threshold swing is 70% smaller. Furthermore, NAND and NOR logic circuits are also constructed based on two vertically stacked MoS2 channels. Then, C-FET arrays are fabricated by 3D integrating n-type MoS2 FET and p-type MoTe2 FET, which exhibit a voltage gain of 7 V/V when V-DD = 4 V. In addition, this C-FET device can directly convert light signals to an electrical digital signal within a single device. The demonstration of MBC-FET and C-FET based on large-scale 2D semiconductors will promote the application of 2D semiconductors in next-generation circuits.