文献类型：期刊文献

中文题名：立式冷壁反应器中化学气相淀积TiN涂层 Ⅰ.淀积参数对反应速率和涂层质量的影响

英文题名：Chemical Vapor Deposition of TiN Coating in Cold-Wall Reactor Ⅰ.Effects of Deposition Parameters on Reaction Rate and Film Qualities

作者：丁平[1];盛明慧[1];丛德滋[1];韩杰[1];陈良恒[1];袁渭康[1]

机构：[1]华东化工学院联合化学反应工程研究所技术化学物理研究室

年份：1990

卷号：16

期号：3

起止页码：255

中文期刊名：华东化工学院学报

收录：Scopus;CSCD:【CSCD2011_2012】；

基金：中国自然科学基金

语种：中文

中文关键词：化学气相淀积;氮化钛;涂层;反应器

外文关键词：chemical vapor deposition; titanium nitride; reaction rate; coating qualities; cold-wall reactor

摘要：在立式冷壁CVD反应器中,用TiCl_4-H_2N_2和TiCl_4-H_2N_2-Ar为反应物源,在YT15硬质合金刀片上淀积TiN涂层。研究了淀积参数对淀积薄膜质量和淀积速率的影响。得到的TiN_x涂层外观光洁,呈金黄色,x为0.8～1.6,淀积速率15～60m^(-6)/h,显微硬度1800～2200HV,淀积反应为扩散过程控制;表观活化能为46.5kJ/mol。实验表明,TiN在冷壁反应器中的淀积速率远大于在热壁反应器中的淀积速率。
The effects of process parameters on deposition rate and coating qualities of TiN on WC-Co-TiC substrate by chemical vapor deposition were studied over a wide range of process variables. The deposition was carried out in a vertical cold-wall reactor under atmospheric pressure. Golden coloured TiN coating was obtained at about 975℃ TiCl_4 partial pressure, 0.75～1.5 kPa; N_2/H_2, 1.0; flow velocity, 0.4～1.0m^(-2)s; deposition rate, 15～60 m^(-6)/h and microhardness, 1800～2200 HV. The dependence of deposition rate on temperature has been found to be well represented by Arrhenius law; activation energy for TiN coating is 46.5 kJ/mol. The deposition rate of TiN in the cold-wall reactor is ten times greater than that in the hot-wall reactor.