文献类型：期刊文献

英文题名：Antiferromagnetic quantum spin Hall insulators with high spin Chern numbers

作者：Xue, Yang[1];Xu, Wei[2,3,4];Zhao, Bao[2,3,4,5];Zhang, Jiayong[6];Yang, Zhongqin[2,3,4,7]

机构：[1]East China Univ Sci & Technol, Dept Phys, Shanghai 200237, Peoples R China;[2]Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China;[3]Fudan Univ, Key Lab Computat Phys Sci, MOE, Shanghai 200433, Peoples R China;[4]Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China;[5]Liaocheng Univ, Sch Phys Sci & Informat Technol, Shandong Key Lab Opt Commun Sci & Technol, Liaocheng 252059, Shandong, Peoples R China;[6]Suzhou Univ Sci & Technol, Sch Phys Sci & Technol, Jiangsu Key Lab Micro & Nano Heat Fluid Flow Tech, Suzhou 215009, Peoples R China;[7]Shanghai Qi Zhi Inst, Shanghai 200030, Peoples R China

年份：2023

卷号：108

期号：7

外文期刊名：PHYSICAL REVIEW B

收录：;EI(收录号：20233614664889);WOS:【SCI-EXPANDED(收录号:WOS:001103410900001)】；

基金：We thank Prof. Supeng Kou for a very helpful discussion. This work was supported by National Natural Science Foundation of China under Grants No. 11904101, No. 11604134, No. 11874117, No. 11904250, and No. 12174059 and the Natural Science Foundation of Shanghai under Grant No. 21ZR1408200.

语种：英文

外文关键词：Antiferromagnetism - Bismuth compounds - Electric fields - Iron compounds - Magnesium compounds - Monolayers - Titanium compounds - Topology - Van der Waals forces

摘要：Topological states in antiferromagnetic (AFM) systems have gained much attention recently. However, general proposals for the realization of a two-dimensional (2D) AFM quantum spin Hall (QSH) insulator are still absent. In this paper, we present a general proposal for 2D AFM QSH insulators by stacking 2D half quantum anomalous Hall insulators in a way that maintains the symmetry of a combination of inversion symmetry and time-reversal symmetry. Depending on the number of stack layers, the obtained AFM QSH insulators can have multiple pairs of dissipationless spin transport channels, revealing the nontrivial implication of high (even) spin Chern numbers (C-s). Using two concrete material examples, Fe2BrMgP monolayer and TiTe bilayer, we show that both intercalation and van der Waals stacks can be used to realize the proposed AFM QSH insulators. The robustness of the gapless edge states and the topological invariants (high C-s) of our AFM QSH insulators have been tested and shown to be robust against diluted magnetic impurities and weak magnetic field. The spin-chirality-spatial locking phenomenon in the edge states and their susceptibility to z-direction electric field modulation promote these systems as promising candidates for innovative spintronics applications.