文献类型：期刊文献

英文题名：The impact of deposition and annealing temperature on the growth properties and surface passivation of silicon dioxide films obtained by atomic layer deposition

作者：Xu, Jiahui[1];Li, Shizheng[1];Zhang, Wenjing[1];Yan, Shang[1];Liu, Cui[1];Yuan, Xiao[1];Ye, Xiaojun[1];Li, Hongbo[1]

机构：[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China

年份：2021

卷号：544

外文期刊名：APPLIED SURFACE SCIENCE

收录：;EI(收录号：20210209753077);WOS:【SCI-EXPANDED(收录号:WOS:000618292900003)】；

基金：This work was supported by the National Key R&D Program of China (2018YFB1500301).

语种：英文

外文关键词：Atomic layer deposition; Silicon dioxide; Surface passivation; Deposition temperature; Annealing temperature

摘要：This paper studies the impact of deposition and annealing temperature on the growth properties and surface passivation of silicon dioxide (SiO2) films obtained by atomic layer deposition (ALD) using tris(dimethylamino)-silane (TDMAS) precursor. Increasing in deposition temperature from 200 to 350 degrees C alters the growth rate and refractive index significantly. The ALD-SiO2 films deposited at over 250 degrees C obtain excellent surface passivation after annealing at 650 degrees C, which could be explained by the synergistic effects of chemical and field-effect passivation caused by low interface defect states density (D-it) and high positive fixed charges density (Q(f)), respectively. Meanwhile, the effect of deposition temperature on surface passivation depends on the extent of TDMAS chemical adsorption and dissociation during ALD. X-ray photoelectron spectroscopy (XPS) shows low temperature as-deposited SiO2 films contain higher carbon impurities because of the remained dimethylamine groups. Regarding the impact of annealing temperature on surface passivation, secondary ion mass spectroscopy profiles and XPS results reveal that high-temperature annealing probably forms more hydrogen and oxygen vacancies at SiO2/Si interface, causing a decrease in D-it and an increase in positive Q(f) respectively. This work provides a reference for applying ALD-SiO2 films to surface passivation technology of crystalline silicon solar cells.