文献类型：期刊文献

英文题名：Methylthiophene terminated D-π-D molecular semiconductors as multifunctional interfacial materials for high performance perovskite solar cells

作者：Zhang, Hao[1];Mao, Yuhua[1];Xu, Jie[2];Li, Shanshan[1];Guo, Fusheng[1];Zhu, Lingyu[1];Wang, Jianli[1];Wu, Yongzhen[2]

机构：[1]Zhejiang Univ Technol, Coll Chem Engn, State Key Lab Breeding Base Green Chem Synth Tech, Hangzhou 310014, Peoples R China;[2]East China Univ Sci & Technol, Sch Chem & Mol Engn, Shanghai 200237, Peoples R China

年份：2022

卷号：10

期号：5

起止页码：1862

外文期刊名：JOURNAL OF MATERIALS CHEMISTRY C

收录：;EI(收录号：20220711637767);WOS:【SCI-EXPANDED(收录号:WOS:000743627700001)】；

基金：This work was supported by the National Science Foundation of China (Grants 22109138 and 22178317) and the China Postdoctoral Science Foundation (2020M671790).

语种：英文

外文关键词：Metal halides - Surface defects - Defect density - Perovskite

摘要：Rationally modulating the physicochemical properties at a perovskite-charge transporting layer interface is crucial for further improvement of metal halide perovskite solar cell (PSC) performance. Here, we present two methylthiophene terminated molecular semiconductors with a donor-pi spacer-donor configuration (MT1 and MT2) as multifunctional interfacial materials for PSCs. The terminal methylthiophene groups endow the molecular semiconductors with defect passivation capability by coordinating with Pb2+ on the perovskite surface. Besides, both MT1 and MT2 exhibit a stabilized HOMO level and a high lying LUMO level which are favorable for selectively extracting holes while preventing electron transfer. When the two molecular semiconductors were inserted between the perovskite film and hole transporting layer (HTL), the defect density of the perovskite films was significantly reduced, and the charge carrier dynamics was simultaneously improved due to the semiconducting nature of the interfacial materials, as well as the cascade interfacial energy level alignment, which effectively reduces non-radiative recombination losses in PSC devices. Consequently, planar n-i-p structured PSCs based on molecular semiconductors exhibit remarkably increased V-OC and FF values, and less hysteresis, along with an increased efficiency from 18.64% to 20.11% with MT2 as the interlayer. Moreover, hydrophobic molecular semiconductors could improve the long term stability of PSC devices by shielding the perovskite layer from external moisture.