文献类型：期刊文献

中文题名：化学气相淀积反应器中成核与成膜控制

英文题名：CONTROLLING OF PARTICLE FORMATION AND FILM GROWTH IN THE CVD REACTOR

作者：李春忠[1];胡黎明[1];袁渭康[1];陈敏恒[1]

机构：[1]华东化工学院技术化学物理研究所,上海200237

年份：1993

卷号：44

期号：5

起止页码：523

中文期刊名：化工学报

外文期刊名：CIESC Journal

收录：CSTPCD;;EI(收录号：1994041234956);Scopus;北大核心:【北大核心1992】；CSCD:【CSCD2011_2012】；

基金：国家自然科学基金资助项目

语种：中文

中文关键词：气相淀积;粒度;薄膜;反应器;气溶胶

外文关键词：chemical vapor deposition, particle size distribution, film growth

摘要：基于气溶胶动力学和化学反应动力学,建立了化学气相淀积(CVD)反应器中普适动力学方程,导出了CVD反应器中超细颗粒粒径分布谱函数和薄膜淀积速率的计算方法;研究了操作参数对钛酸丁酯高温裂解过程中成核与成膜的影响.用成核与成膜竞争判据——H准数,研究了CVD反应器中成核与成膜的控制策略.
A generalzed dynamic equation based on aerosol dynamics and reaction kinetics for a CVD reactor was derived, and a calculation method for particle size distribution and film growth rate in the CVD reactor was developed. The effects of operation parameters on particle formation and film growth process were simulated with this method. By means of a dimensionless parameter H, the optimal condition for particle formation and film growth in the CVD reactor could be determined quantatively.