文献类型：期刊文献

英文题名：Single-photon transistor based on cavity electromagnetically induced transparency with Rydberg atomic ensemble

作者：Hao, Y. M.[1];Lin, G. W.[1];Lin, X. M.[2];Niu, Y. P.[1];Gong, S. Q.[1]

机构：[1]East China Univ Sci & Technol, Dept Phys, Shanghai 200237, Peoples R China;[2]Fujian Normal Univ, Coll Phys & Energy, Fuzhou 350108, Fujian, Peoples R China

年份：2019

卷号：9

外文期刊名：SCIENTIFIC REPORTS

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000461417500006)】；

基金：This work was supported by the National Natural Sciences Foundation of China (Grants No. 11874146, No. 11774089, and No. 11674094), Shanghai Natural Science Fund Project (Grants No. 17ZR1442700, 18DZ2252400, and 18ZR1410500).

语种：英文

摘要：A scheme is presented to realize a single-photon transistor based on cavity quantum electrodynamics (QED) with Rydberg atomic ensemble. By combining the advantages of the cavity-enhanced interaction and Rydberg blockade, we achieve a high gain single-photon transistor. The numerical calculation shows that by using one single gate photon more than one thousand source photons can be switched.