文献类型：期刊文献

英文题名：Analysis of laser damage and gettering effect induced by laser boron doping

作者：Yang, Ning[1];Li, Shizheng[1];Yuan, Xiao[1];Liu, Cui[1];Ye, Xiaojun[1];Liu, Guojun[2];Li, Hongbo[1]

机构：[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China;[2]Suzhou Gorichen Sci & Technol Co LTD, Suzhou 215128, Jiangsu, Peoples R China

年份：2018

卷号：29

期号：10

起止页码：8210

外文期刊名：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

收录：;EI(收录号：20181204915209);WOS:【SCI-EXPANDED(收录号:WOS:000430496800030)】；

基金：This work was supported by the Shanghai Science and Technology Committee Project (17DZ1201102 and 16DZ1203300).

语种：英文

外文关键词：Crystallinity - Iron - Laser damage - Boron - Amorphous silicon - Silicon wafers

摘要：In the present work, laser damage on laser boron doped silicon wafers is studied. Direct evidences of two different laser damages are observed with SEM/STEM: pores appearing in the surface and dislocations in the bulk. Statistical pore size distributions illustrate a downtrend of pore size with laser scan speed increasing. The crystallinity of wafer surface before and after laser doping is also characterized and analyzed by using Raman spectroscopy together with the volume fraction of crystalline X-c. The broadened and fitted Raman bands as well as X-c values present consistent evidence of amorphous silicon introduced in the wafer surface after laser doping. Gettering effect induced by laser doping is studied by taking iron concentration as standard. The highest gettering efficiency (similar to 99.5%) is achieved at the middle laser scan speed (4 m/s), which most likely results from the joint effect of segregation coefficient and segregation time. Finally, the influence of laser doping on minority carrier lifetime is discussed with respect to a comprehensive consequence affected by laser damage, boron concentration and iron concentration.