文献类型：期刊文献

中文题名：氧气含量对射频磁控溅射Ba_(0.5)Sr_(0.5)TiO_3薄膜介电性能的影响

英文题名：EFFECT OF OXYGEN GAS CONTENT ON THE DIELECTRIC PROPERTIES OF Ba_(0.5)Sr_(0.5)TiO_3 THIN FILMS PREPARED BY RADIO FREQUENCY MAGNETRON SPUTTERING

作者：林明通[1];陈国荣[1];杨云霞[1];肖田[2];陈晨曦[2]

机构：[1]华东理工大学材料科学与工程学院,上海200237;[2]上海广电电子股份有限公司,上海200081

年份：2006

卷号：34

期号：5

起止页码：593

中文期刊名：硅酸盐学报

外文期刊名：Journal of The Chinese Ceramic Society

收录：CSTPCD;;Scopus;北大核心:【北大核心2004】；CSCD:【CSCD2011_2012】；

语种：中文

中文关键词：钛酸锶钡薄膜;氧化铟锡;介电性能;射频磁控溅射;氧气含量

外文关键词：barium strontium titanate thin films; indium tin oxide; dielectric properties; radio frequency magnetron sputtering; oxygen gas content

摘要：采用射频磁控溅射法在镀氧化铟锡的Corning1737玻璃基片上制备了用于无机电致发光显示器绝缘层的Ba0.5Sr0.5TiO3介电薄膜,该薄膜厚约400nm。研究了O2和Ar+O2的体积比V(O2)/V(Ar+O2)对薄膜沉积速率、结晶性和介电性能的影响。当V(O2)/V(Ar+O2)由0增加至0.5时,薄膜的结晶取向、介电常数、介电损耗、击穿场强和漏电流密度并没有明显的规律性可循。V(O2)/V(Ar+O2)为0.1时,薄膜的品质因子最好,其值为5μC/cm2。
400 nm thick Ba0.5Sr0.5TiO3 thin films used as insulating layer in thin film electroluminescent devices were prepared on indium tin oxide-coated Coming 1737 glass by radio frequency magnetron sputtering, and the effect of volume ratio of O2 to Ar＋O2 V（O2）/V（Ar＋O2） on deposition rate, crystallinity as well as dielectric properties of the Ba0.5Sr0.5TiO3 thin films were investigated. The preferred orientation, dielectric constant, dielectric dissipation, breakdown strength and leakage current density do not follow a clearly regular trend when the V（O2）/V（Ar＋O2） is varied from 0 to 0.5. The optimal figure of merit is 5 μC/cm^2 at a V（O2）IV（Ar＋O2） of 0.1.