文献类型：期刊文献

中文题名：Ultrafine Vacancy-Rich Nb_(2)O_(5)Semiconductors Confined in Carbon Nanosheets Boost Dielectric Polarization for High-Attenuation Microwave Absorption

作者：Zhe Su[1];Shan Yi[1];Wanyu Zhang[1];Xiaxi Xu[1];Yayun Zhang[1];Shenghu Zhou[1];Bo Niu[1];Donghui Long[1,2]

机构：[1]Shanghai Key Laboratory of Multiphase Materials Chemical Engineering,School of Chemical Engineering,East China University of Science and Technology,Shanghai 200237,People’s Republic of China;[2]Key Laboratory for Specially Functional Materials and Related Technology of the Ministry of Education,East China University of Science and Technology,Shanghai 200237,People’s Republic of China

年份：2023

卷号：15

期号：10

起止页码：478

中文期刊名：Nano-Micro Letters

外文期刊名：纳微快报（英文版）

收录：CSTPCD;;Scopus;CSCD:【CSCD2023_2024】；PubMed;

基金：supported by National Natural Science Foundation of China(No.22078100,No.52102098,and No.22008073);Fundamental Research Funds for the Central Universities(No.222201718002)。

语种：英文

中文关键词：Electromagnetic wave absorption;Nb_(2)O_(5)semiconductor;Dielectric polarization loss;Oxygen vacancy;Nb_(2)O_(5)-carbon hetero-interface

摘要：The integration of nano-semiconductors into electromagnetic wave absorption materials is a highly desirable strategy for intensifying dielectric polarization loss;achieving high-attenuation microwave absorption and realizing in-depth comprehension of dielectric loss mechanisms remain challenges.Herein,ultrafine oxygen vacancy-rich Nb_(2)O_(5)semiconductors are confined in carbon nanosheets(ov-Nb_(2)O_(5)/CNS)to boost dielectric polarization and achieve high attenuation.The polarization relaxation,electromagnetic response,and impedance matching of the ov-Nb_(2)O_(5)/CNS are significantly facilitated by the Nb_(2)O_(5)semiconductors with rich oxygen vacancies,which consequently realizes an extremely high attenuation performance of-80.8 dB(>99.999999%wave absorption)at 2.76 mm.As a dielectric polarization center,abundant Nb_(2)O_(5)–carbon heterointerfaces can intensify interfacial polarization loss to strengthen dielectric polarization,and the presence of oxygen vacancies endows Nb_(2)O_(5)semiconductors with abundant charge separation sites to reinforce electric dipole polarization.Moreover,the three-dimensional reconstruction of the absorber using microcomputer tomography technology provides insight into the intensification of the unique lamellar morphology regarding multiple reflection and scattering dissipation characteristics.Additionally,ov-Nb_(2)O_(5)/CNS demonstrates excellent application potential by curing into a microwave-absorbing,machinable,and heat-dissipating plate.This work provides insight into the dielectric polarization loss mechanisms of nano-semiconductor/carbon composites and inspires the design of high-performance microwave absorption materials.