详细信息

Regulating the valence state of lead ions in lead aluminosilicate glass to improve the passivation performance for advanced chip packaging  ( SCI-EXPANDED收录 EI收录)  

文献类型:期刊文献

英文题名:Regulating the valence state of lead ions in lead aluminosilicate glass to improve the passivation performance for advanced chip packaging

作者:Chen, Junwei[1];Li, Ao[1];Zhong, Cong[1];Zhang, Liangzhu[1];Lu, Kejun[2];Zeng, Huidan[1]

机构:[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China;[2]Beijing Beixu Elect Mat Co LTD, Beijing 100016, Peoples R China

年份:2024

卷号:651

外文期刊名:APPLIED SURFACE SCIENCE

收录:;EI(收录号:20240115320982);WOS:【SCI-EXPANDED(收录号:WOS:001165899600001)】;

基金:This work was supported by the National Natural Science Foundation of China (NSFC 52272001 and 52072122) .

语种:英文

外文关键词:Lead aluminosilicate glasses; Interface passivation; Chip packaging; MOS structure

摘要:Eliminating surface ion contamination, increasing the reverse breakdown voltage and reducing the leakage current are extremely important for semiconductor devices. Herein, we demonstrated that regulating the valence state of lead ions in lead aluminosilicate glass can efficiently improve the performance of glass passivation technique for chip packaging. It was found that heat treatment technique can be utilized to control valence state of lead ions from +4 into +2 in 20PbO-4.8Al(2)O(3)-75.2SiO(2) (mol%) (PAS) glass powder, which induces transformation of [PbO3] units into stable glass former units of [PbO4] and generates a free state and charge compensator of Pb2+, therefore contributing to a more stable structure and discoloration of glass. As a result, the optical band gap of glass powder was enhanced from 4.1772 to 4.3184, which could significantly improve glass insulation. As a demonstration of chip packaging, PAS glass powder, after heat treatment processing into a paste for the passivation layer of metal-oxide-semiconductor (MOS) structure devices shows a tight and integrated structure and exhibits a lower fixed charge density from 3.97 x 10(10)cm(-2) to 2.73 x 10(10) cm(-2). This work provides techniques to adjust the structure of glass to enhance the passivation performance of glass for chip packaging.

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