文献类型：期刊文献

英文题名：Alumina film deposited by spin-coating method for silicon wafer surface passivation

作者：Cao, Liqi[1];Yang, Ning[1];Li, Shizheng[1];Ye, Xiaojun[1];Yuan, Xiao[1];Li, Hongbo[1];Tong, Hua[1]

机构：[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai 200237, Peoples R China

年份：2020

卷号：31

期号：3

起止页码：2686

外文期刊名：JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

收录：;EI(收录号：20200208028484);WOS:【SCI-EXPANDED(收录号:WOS:000512889300096)】；

语种：英文

外文关键词：Alumina - Cost effectiveness - Passivation - Binding energy - Aluminum oxide - Sols - X ray photoelectron spectroscopy - Carrier lifetime - Coatings

摘要：In the present work, alumina gel was developed for passivating silicon wafers. The alumina gel was prepared by sol-gel method with aluminum sec-butoxide as precursor. After coating, rapid thermal process (RTP) was conducted to activate the passivation effect. X-ray photoelectron spectroscopy and C-V curve were executed to evaluate film properties. The peak at 74.35 eV confirmed the formation of Al2O3. Meanwhile, a small peak at low binding energy decreased with the growth of annealing temperature, which was ascribed to the escape of hydrogen, leading to the decline of effective lifetime after 700 degrees C. The highest fixed charge (Q(f)) of - 1.16e12 cm(-2) and superior interface defect density at mid gap (D-it) of 1.98e12 cm(-2)eV(-1) were obtained at the annealing temperature of 700 degrees C, contributing to the highest effective minority carrier lifetime of 292 mu s. The present work will be helpful to provide a more cost-effective technique for Al2O3 passivation.