文献类型：期刊文献

英文题名：Push-Pull Archetype of Reduced Graphene Oxide Functionalized with Polyfluorene for Nonvolatile Rewritable Memory

作者：Zhang, Bin[1];Chen, Yu[1,2];Liu, Gang[3];Xu, Li-Qun[3];Chen, Junneng[1];Zhu, Chun-Xiang[4];Neoh, Koon-Gee[3];Kang, En-Tang[3]

机构：[1]E China Univ Sci & Technol, Inst Appl Chem, Shanghai Key Lab Funct Mat Chem, Shanghai 200237, Peoples R China;[2]Fudan Univ, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China;[3]Natl Univ Singapore, Dept Chem & Biomol Engn, Singapore 119260, Singapore;[4]Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 119260, Singapore

年份：2012

卷号：50

期号：2

起止页码：378

外文期刊名：JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY

收录：;EI(收录号：20115114611190);WOS:【SCI-EXPANDED(收录号:WOS:000298479300020)】；

基金：We are grateful for the financial support of the National Natural Science Foundation of China (21074034), the Ministry of Education of China (309013), the Fundamental Research Funds for the Central Universities, the State Key Laboratory of ASIC & System of Fudan University (11KF007), the Shanghai Municipal Educational Commission for the Shuguang fellowship (08GG10), and the Shanghai Eastern Scholarship.

语种：英文

外文关键词：conjugated polymers; functionalization of polymers; high performance polymers; polyfluorene; reduced graphene oxide; rewritable memory effect; synthesis

摘要：A solution-processable PFTPA-convalently grafted reduced graphene oxide (RGO-PFTPA) was synthesized by the 1,3-dipolar cycloaddition of azomethine ylide. Bistable electrical switching and nonvolatile rewritable memory effects were demonstrated in a sandwich structure of indium tin oxide/RGO-PFTPA/Al. The switch-on voltage of the as-fabricated device was around -1.4 V, and the ON/OFF-state current ratio was more than 10(3). The ON-OFF transition process is reversible because the application of a high enough positive voltage can induce the reverse transfer of electrons, reducing the conductivity back to its initial OFF state. Both the OFF and ON states are accessible and very stable under a constant voltage stress of -1 V for up to 3 h, or under a pulse voltage stress of -1 V for up to 10(8) continuous read cycles (pulse period = 2 mu s, pulse width = 1 mu s). (C) 2011 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 50: 378-387, 2012