文献类型：期刊文献

英文题名：A mathematical model for predicting the electro-mechanical behavior of crack-based flexible strain sensor

作者：Song, Ziming[1];Li, Qi[1];Yan, Yabin[1];Gao, Yang[1,2];Xuan, Fuzhen[1,3]

机构：[1]East China Univ Sci & Technol, Sch Mech & Power Engn, Shanghai Key Lab Intelligent Sensing & Detect Tech, Shanghai 200237, Peoples R China;[2]Wuhan Text Univ, State Key Lab New Text Mat & Adv Proc Technol, Wuhan 430200, Peoples R China;[3]East China Univ Sci & Technol, Key Lab Pressure Syst & Safety, Minist Educ, Shanghai 200237, Peoples R China

年份：2023

卷号：123

期号：15

外文期刊名：APPLIED PHYSICS LETTERS

收录：;EI(收录号：20234214926228);WOS:【SCI-EXPANDED(收录号:WOS:001083944200015)】；

基金：This work was supported by the National Natural Science Foundation of China (Grant Nos. 52275146 and 52205154), the Shanghai Super Postdoctoral Incentive Plan (No. 2022160), the China Postdoctoral Science Foundation (Grant No. 2022M721139), and the State Key Laboratory of New Textile Materials and Advanced Processing Technologies (No. FZ2022006).

语种：英文

外文关键词：Carbon nanotubes - Probability distributions - Silicon compounds - Silicon oxides - Tensile strain

摘要：Crack-based flexible strain sensor generally shows significantly high sensitivity due to crack propagation induced conductive path reduction during stretching. To quantitatively analyze the relationship among strain, crack density, and device sensitivity, an electro-mechanical mathematical model is developed for investigating the performance of a carbon nanotube-silicon oxide/polydimethylsiloxane (CNT-SiOx/PDMS) based crack strain sensor. Strength and energy criteria are used to predict the crack density for SiOx/PDMS under different strains. The results are utilized with the probability distribution based cellular automata method to determine the crack distribution for further electrical analysis, which is related to the conductive and non-conductive classification of elements. Finally, the potential distribution for whole elements is calculated, leading to the investigation of sensitivity toward the CNT-SiOx/PDMS based strain sensor. The maximum predicted crack density of the SiOx/PDMS can reach 41.36 x 10(-3) mu m(-1) under 60% tensile strain with a deviation of 5.23% compared to the experimental data. Correspondingly, the maximum predicted sensitivity of the device can reach 512.81 at a SiOx thickness of 3.93 mu m, with the deviation of 9.25%. Based on the predicted results, it can be concluded that crack density affects the distribution and quantity of conductive elements. When stress is applied to the device, the crack density increases, and the conductive elements located in the crack area undergo a disconnection process, resulting a significant reduction in the conductive path and a rapid increase in sensitivity for strain sensor.