文献类型：期刊文献

英文题名：Fabrication of Cu2ZnSnS4 Thin Films Based on Facile Nanocrystals-Printing Approach with Rapid Thermal Annealing (RTA) Process

作者：Chen, Jin[1];Wang, Fengchao[1];Yang, Bobo[1];Peng, Xiaogai[1];Chen, Qinmiao[2];Zou, Jun[1];Dou, Xiaoming[2,3]

机构：[1]Shanghai Inst Technol, Coll Sci, 100 Haiquan Rd, Shanghai 201418, Peoples R China;[2]East China Univ Sci & Technol, Sch Sci, 130 Meilong Rd, Shanghai 200237, Peoples R China;[3]Osaka Univ, Dept Appl Phys, Grad Sch Engn, Suita, Osaka 5650871, Japan

年份：2019

卷号：9

期号：2

外文期刊名：COATINGS

收录：;WOS:【SCI-EXPANDED(收录号:WOS:000460700700068)】；

基金：The project was sponsored by Shanghai Sailing Program, China (No. 18YF1422500), Research start-up project of Shanghai Institute of Technology (No. YJ2018-9), Science and Technology Planning Project of Zhejiang Province, China (No. 2018C01046), and Enterprise-funded Latitudinal Research Projects (Nos. J2016-141, J2017-171, J2017-293 and J2017-243).

语种：英文

外文关键词：CZTS thin films; nanocrystals-printing approach; rapid thermal annealing; solar cells

摘要：In the current study, Cu2ZnSnS4 (CZTS) thin film was successfully fabricated by the facile nanocrystals (NCs)-printing approach combined with rapid thermal annealing (RTA) process. Firstly, the CZTS NCs were synthesized by a thermal solution method and the possible formation mechanism was analyzed briefly. Then the influences of RTA toleration temperature and duration time on the various properties of as-printed thin films were examined via XRD, Raman, FE-SEM, UV-vis-IR spectroscopy, EDS and XPS treatments in detail. As observed, the RTA factors of temperature and time had significant impacts on the structure and morphology of as-prepared thin films, while there were no obvious effects on the band gap energy in studied conditions. The results showed that the obtained thin film at optimal RTA conditions of (600 degrees C, 20 min) featured a kesterite structure in pure phase and an irregular morphology consisting of large grains. Moreover, the satisfactory composition of a Cu-poor, Zn-rich state and an ideal band gap energy of 1.4 eV suggests that as-fabricated CZTS thin film is a suitable light-absorbing layer candidate for the application in thin film solar cells.