文献类型：期刊文献

英文题名：Amorphous vanadium oxides with metallic character for asymmetric supercapacitors

作者：Chen, Shuai[1];Jiang, Hao[1];Cheng, Qilin[1];Wang, Gengchao[1];Saha, Petr[2];Li, Chunzhong[1]

机构：[1]East China Univ Sci & Technol, Sch Mat Sci & Engn, Shanghai Engn Res Ctr Hierarch Nanomat, Key Lab Ultrafine Mat,Minist Educ, Shanghai 200237, Peoples R China;[2]Tomas Bata Univ Zlin, Univ Inst, Ctr Polymer Syst, Trida T Bati 5678, Zlin 76001, Czech Republic

年份：2021

卷号：403

外文期刊名：CHEMICAL ENGINEERING JOURNAL

收录：;EI(收录号：20203108996667);WOS:【SCI-EXPANDED(收录号:WOS:000579752500099)】；

基金：This work was supported by the National Natural Science Foundation of China (21838003 and 91834301), the Social Development Program of Shanghai (17DZ1200900), the Shanghai Scientific and Technological Innovation Project (18JC1410500), National Key R&D Program of China (2016YFE0131200), and the Fundamental Research Funds for the Central Universities (222201718002).

语种：英文

外文关键词：Defect engineering; Vanadium oxide; Anode materials; High energy density; Asymmetric supercapacitors

摘要：Exploiting high-capacitance and broad-potential anode materials is of critical for boosting the energy density of aqueous asymmetric supercapacitors. Herein, we have reported the synthesis of the amorphous vanadium oxide nanosheet arrays with metallicity by defect engineering, which enables the oxygen vacancy content as high as 28.5%. The DOS calculations and the XPS analysis further disclose the disappearance of band gap. The oxygen vacancy can also accelerate the ions migration on their (sub-) surface with lower energy barrier. Consequently, the as-obtained anode delivers an ultrahigh specific capacitance of 554 mF.cm(-2) (346 F.g(-1)) at 1 mA.cm(-2) (0.625 A.g(-1)) with a capacitance retention of 66% even at 32 mA.cm(-2). After assembling into a flexible quasi-solid-state asymmetric supercapacitor, the energy density can reach as high as 161.8 mu Wh.cm(-2) at 0.5 mW.cm(-2). This finding has extended the defect engineering strategy to regulate the crystal structure and electrical conductivity for high-performance electrochemical devices.